Oxygen-Related Defects in Irradiated Germanium
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概要
- 論文の詳細を見る
Oxygen-related defects produced in oxygen-doped germanium by 1.5 MeV electron irradiation were studied by DLTS technique. Three electron trapping levels attributable to this type of defect were found. The E_c-0.25 eV level is deduced to be introduced by two kinds of defects, namely, the germanium A-center (oxygen-vacancy complex) and the defect associated with the 715 cm^<-1> infrared absorption band reported by Whan. The E_c -0.29 eV level and the E_c -0.13 eV level are attributable to the defects associated with the 819 cm^<-1> and the 731 cm^<-1> infrared absorption bands in her paper.
- 社団法人応用物理学会の論文
- 1983-06-20
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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KAMBE Yoshiyuki
Department of Physics, College of General Education, Osaka University
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Kambe Yoshiyuki
Department Of Physics College Of General Education Osaka University
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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