Impurity Dependence of the Annealings of Gamma-Ray Induced Defects in p-Type Germanium
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概要
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Annealing of radiation induced defects in gallium- or indium-doped germanium was studied by measuring minority carrier lifetime. The samples were irradiated with Co 60 gamma rays at 190 K or at room temperature. Three annealing stages were observed in the temperature range 20〜200℃. Activation energies and frequency factors of the low temperature stage (20〜60℃) were found to depend on the atomic size of the impurity. The activation energies were obtained to be 0.88 eV and 0.60 eV for inditum- and gallium-doped samples respectively. A model for the stage is proposed as follows: An impurity-vacancy complex migrates to a substitutional impurity atom and makes an association. In the intermediate temperature stage (80〜125℃) a deep trap grows up at the expense of a shallow trap. A recombination level at E_V+0.06eV is removed in the temperature stage above 130℃. The activation energy of the high temperature stage is also dependent on the impurity species.
- 社団法人応用物理学会の論文
- 1973-10-05
著者
-
Oka Masahiro
Department Of Dermatology Graduate School Of Medicine Kobe University
-
Ito Kazuyoshi
Department Of Material Science Interdisciplinary Faculty Of Science And Engineering Shimane Universi
-
Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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OKA Masahiro
Department of Physics, Faculty of Literature and Science, Shimane University
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