Interaction of Point Defects with Hydrogen in Germanium
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概要
- 論文の詳細を見る
The defect levels produced in undoped germanium crystals by implantation with 50 keV hydrogen ions of irradiation with 1.5 MeV electrons and the annealing behaviour of the materials were studied by DLTS technique. The positions or the trap levels and the cross sections of hole trapping of these traps were determined. The level located at E_V+0.42 eV produced by electron irradiation should be ascribed to a divacancy. In the samples implanted with hydrogen ions, the trap levels at E_V+0.38 eV and E_V+0.42 eV annealed at the same temperature. The two traps are attributable to the defect levels associated with a divacancy-hydrogen complex.
- 社団法人応用物理学会の論文
- 1983-11-20
著者
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ITO Kazuyoshi
Department of Materials Science and Engineering, Yamagata University
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Ito Kazuyoshi
Department Of Physics Shimane University
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Ito Kazuyoshi
Department Of Material Science Interdisciplinary Faculty Of Science And Engineering Shimane Universi
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CORBETT James
Physics Department, State University of N.Y, at Albany
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Corbett James
Physics Department State University Of N.y At Albany
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