Indistinct Defect Images in Topographs of Nearly Perfect Aluminum Crystals Just Prior to Appearance of Dislocation Loops : Condensed Matter: Structure, etc.

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Vacancy generation and annihilation mechanisms by the growth of two types of dislocation loops, the interstitial and the vacancy type, in nearly perfect aluminum single crystals at fairly high temperatures were investigated by synchrotron radiation topography. Topographs were continuously taken with white beam X-ray at an elevated temperature. Just prior to the appearance of the loops, an indistinct image topograph, in which not only defect images but also fringes were unclear, was taken for both types of loops in spite of a short exposure time (<3 s). This phenomenon was interpreted as being due to the scattering of the diffracted X-ray beam by very small clusters of interstitial atoms or vacancies which are invisible on the X-ray topograph. Moreover, some of them grow into interstitial or vacancy type dislocation loops as revealed by X-ray topography.
社団法人日本物理学会の論文
2000-05-15