Vacancy Annihilation to Non-Uniformly Distributed Dislocations in Quenched Aluminum
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概要
- 論文の詳細を見る
Annealing profiles of vacancies in zone-refined aluminum were studied by electricalresistance measurement after quenching, and discussed under either assumption ofuniform distribution of dislocations or non-uniform one. The annealing curvescalculated for the non-uniform distribution of dislocations, using E"..=O.65 eV,f.p=O.50 eV and J.=0.17 eV, show the excellent fit to the experimental annealingcurves. It is suggested from such an analysis that tlxe annealing experiment should bemade on the specimen with a controlled dislocation density and configuratuon in orderto clarify the fundamental properties of point defects in metals.
- 社団法人日本物理学会の論文
- 1977-10-15
著者
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紀 隆雄
広島国際学院大学工学部
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Hashimoto Eiji
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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KABEMOTO Satoru
Faculty of School Education, Hiroshima University
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KABEMOTO Satoru
Shinonome Branch,Faculty of Education,Hiroshima University
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Kabemoto Satoru
Faculty Of School Education Hiroshima University
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