Anisotropy of Residual Electrical Resistivity in High-Purity Aluminum Single Crystals
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概要
- 論文の詳細を見る
Measurements have been made on the residual electrical resistivity in single crystals of high-purity aluminum (RRR ≃ 50000) at 4.2 K. The samples were cut from single-crystal plates with {110} surfaces. The axes of the samples were oriented parallel with the principal axes <100>, <111> and <110>. The results show strong anisotropy, previously not predicted for a normal metal with cubic symmetry. The resistivity increases in the order of the <110>, <111> and <100> directions ; the value along <100> is significantly larger than those of the other two directions.
- 社団法人日本物理学会の論文
- 1993-12-15
著者
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Ueda Yoshitake
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Hashimoto Eiji
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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Hashlmoto Eiji
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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Tamura Hirofumi
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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Hashlmoto Eiji
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Tamura H
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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KINO Takao
Laboratory of Crystal Physics, Faculty of Science, Hiroshima University
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