Deviations from Matthiessen's Rule of the Electrical Resistivity Due to Dislocations in Gold
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概要
- 論文の詳細を見る
The electrical resistivity due to dislocations in gold has been measured in thetemperature range between liquid helium temperature and 300 K. The deviationfrom Matthiessen's rule (DMR) of the dislocation resistivity is different fromthat of the impurity resistivity in the temperature dependence and the residualresistivity dependence. DMR of the dislocation resistivity cannot be explainedby the mechanism due to an anisotropic electron distribution function. Other twomechanisms due to phonon localized modes associated with dislocations andto electron levels localized near dislocations, are considered. In conclusion DMRof the dislocation resistivity is explained fairly well by a model of electron localizedlevels associated with dislocations.
- 社団法人日本物理学会の論文
- 1979-05-15
著者
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KINO Takao
Laboratory of Crystal Physics, Faculty of Science, Hiroshima Univ.
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Endo Toshiro
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University:hiroshima Denki Institute Of T
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Endo Toshiro
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University:(present Address) Hiroshima De
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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