Thermal Generation of Vacancies from Faulted Loops in Aluminum
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概要
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A thermal generation kinetics from faulted loops in high purity aluminum hasbeen studied by the pulse heating technique and the residual resistance measure-ment. The average concentration of vacancies generated from the loops exceedsthe thermal equilibrium concentration of vacancies at the pulsing temperature,depending on the size of the loop. Such a generation profile is explained by.ageneration mechanism which is promoted by the line tension of the faulted loop.The characteristic promotive energy AE in this process is derived to be 0.018 eVand 0.038 eV for the loops with the average diameter 75 nm and 40 nm, respec-tively. It is concluded that the significant part of AE is due to the elastic energychange of the loop associated with the emission of a vacancy, and that the con-tribution from the stacking fault to AE is small in contrast to the earlier worksin aluminum.
- 社団法人日本物理学会の論文
- 1984-12-15
著者
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Ono Kotaro
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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