Vacamcy Source in Nearly Perfect Crystals
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概要
- 論文の詳細を見る
Vacancy generation process in nearly perfect aluminum single crystals wasinvestigated by X-ray diffraction topography technique of Lang. A lot of smallblack dots were observeed in the topograph taken after the temperature rise fromroom temperature to 200'C, and these dots arc confirmed to be small interstitialtype dislocation loops. It was concluded that the thermal generation process ofvacancies in nearly perfect crystals consists of the following two steps. Smallinterstitial clusters are formed in the perfect lattice first, and then these grow tointerstitial type dislocation loops emitting vacancies into lattice.
- 社団法人日本物理学会の論文
- 1984-10-15
著者
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MIZUNO Kiyoshi
Department of physics,Tokyo Metropolitan University
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Mizuno K
Defence Evaluation And Res. Agency Malvern Worcestershire Gbr
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Mizuno K
Department Of Material Science Faculty Of Science And Engineering Shimane University
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Mizuno Kaoru
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Mizuno Kiyoshi
Faculty Of Integrated Arts And Science Tokushima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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