Scattering Anisotropy of Conduction Electrons Due to Vacancies in High-Purity Monocrystalline Aluminium
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概要
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The low-field Hall coefficient 7?p and transverse magnetoresistance coefficient P'shave been measured in a monocrystalline specimen of zone-refined aluminiumquenched from 553 and 573 K. The measurements have been made at 4.2 K with asuperconducting chopper amplifier with a sensitivity better than 5 pV. For vacanciesas scattering centres in aluminium, the low-field coefficients have been obtained as7?fi= -2.02xl0 "m'-C ' and P3=0.45xl0 "Q'-m'-T '. These data are ana-lysed according to the three-group model of Kesternich [W. Kesternich: Phys. Rev.B13 (1976) 4227]. The scattering anisotropy due to a vacancy is similar to that due toMn, Zn and Ag atoms, but different from that'due to Li, Mg and Si atoms. It is con-cluded that the scattering potential of a vacancy strongly extends into the interstitialregion.[scattering anisotropy, Hall effect, magnetoresistance, mean free path, ll aluminium, lattice defect, electronic structurel
- 社団法人日本物理学会の論文
- 1988-11-15
著者
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紀 隆雄
広島国際学院大学工学部
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Ueda Yoshitake
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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KINO Takao
Laboratory of Crystal Physics, Faculty of Science, Hiroshima Univ.
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HOSODA Hiroki
Laboratory of Crystal Physics,Faculty of Science,Hiroshima University
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Hosoda Hiroki
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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