Preparation Method of High Purity Aluminum Single Crystals with Low Dislocation Density
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概要
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The preparation method of high purity aluminum single crystal with low dislocation density has been investigated.The single crystals with dislocation dislocation density 5×10^2/cm^2 have been ob-tained by the strain-anneal technique using the cooling rate changing method under vacuum. The densities and the Burgers vectors of dislocations were examined by X-ray projection topographs.The temperature range to be cooled very slowly has been determined by calculating the excess vacancy concentration and supersaturation in the specimens.The most optimum condition to obtain single crystals with low dislocation densities is obtained, if the specimens are cooled very slowly between 400℃ and 150℃
- 社団法人応用物理学会の論文
- 1978-04-05
著者
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紀 隆雄
広島国際学院大学工学部
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KAMIGAKI Nobuo
Faculty of Education,Ehime University
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Kashiwaya Kenji
(present Address)loboratory Of Crystal Physics Faculty Of Science Hirosima University (present Addre
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Kamigaki Nobuo
Faculty Of Education Ehime University
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DEGUCHI Yasuhiko
Faculty of Education, Ehine Univesity
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KINO Takao
Loboratory of Crystal Physics, Faculty of Science, Hirosima University
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Deguchi Yasuhiko
Department Of Physics Faculty Of Education Ehime University
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