Low Temperature Dependence of Positron Annihilation in Quenched Aluminum
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概要
- 論文の詳細を見る
Doppler-broadened lineshapes of positron annihilation radiation in an aluminumsingle crystal after quenching have been measured as a function of temperaturebetween 4.2 and 200 K. The peak parameter for positron annihilation in thetrapped state at vacancies showed no significant temperature dependence below80 K, while above 100 K, it showed an almost linear temperature dependencewith a temperature coefficient about twice that found for positron annihilationin the free state. A low concentration of vacancies yielded a remarkable increasein the peak parameter as the temperature decreased below 80 K. The resultsshowed a strong temperature dependence of the trapping rate of positrons atvacancies in the low temperature range.
- 社団法人日本物理学会の論文
- 1985-09-15
著者
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紀 隆雄
広島国際学院大学工学部
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KINO Takao
Laboratory of Crystal Physics, Faculty of Science, Hiroshima Univ.
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Shiraishi Takeshi
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Shiraishi T
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Shiraishi T
Department Of Electrical & Electronic Engineering Ritsumeikan University
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Hashimoto Eiji
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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