Orientation Dependence of Flaking of Ion Irradiated Aluminum Single Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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Kamada K
Nara Inst. Sci. And Technol. Nara Jpn
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Kamada Kohji
Institute Of Plasma Physics Nagoya University
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Kamada Kohji
Institute Of Plasma Physics Nagoya Univ.
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ONO Kotaro
Laboratory of Crystal Physics, Faculty of Science, Hiroshima Univ.
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KINO Takao
Laboratory of Crystal Physics, Faculty of Science, Hiroshima Univ.
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OSONO Hiroto
Hiroshima Denki Institute of Technology
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Kino T
Hiroshima Univ. Hiroshima
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Ono Kotaro
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
関連論文
- Production of High-Flux Beams of Hydrogen Ions below 1 keV
- Orientation Dependence of Flaking of Ion Irradiated Aluminum Single Crystals
- Temperature Dependence of Positron Annihilation in Plastically Deformed Copper
- Positron Annihilation in Nearly Perfect Crystals of Aluminum during Slow Cooling
- Low Temperature Dependence of Positron Annihilation in Quenched Aluminum
- Formation of Vacancy Clusters in Quenched Pure Gold and Gold Dilute Alloys
- Small Stacking Fault Tetrahedra Observed in High Purity Gold Shortly after Quenching
- Effects of Hydrogen Impurity on the Nucleation of Vacancy Clusters in Quenched Pure Gold
- Trapping of Interstitials on Impurities in Electron-Irradiated Metals
- Overview of Surface Study of Fusion Research in Universities Linkage Organization (II)
- Improved High-Temperature X-Ray Lang Camera
- Positron Trapping Rate into Dislocations in Aluminum
- A New Low-Temperature Dislocation-Relaxation Peak in Aluminum
- Scattering Anisotropy of Conduction Electrons Due to Vacancies in High-Purity Monocrystalline Aluminium
- High-Field Magnetoresistance in Monocrystalline Aluminum with Vacancy Clusters : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors
- Deviations from Matthiessen's Rule of the Electrical Resistivity Due to Dislocations in Gold
- A High-Temperature X-Ray Lang Camera
- Deviations from Matthiessen's Rule of the Electrical Resistivity of Dislocations in Aluminum
- Thermal Generation of Vacancies from Faulted Loops in Aluminum
- Effects of Transmutation Products on the Formation of Interstitial Loops in High Purity Aluminum
- Vacamcy Source in Nearly Perfect Crystals
- Efficiency of Dislocation as a Sink for Vacancies in Deformed Aluminum
- Magnetic-Breakdown Oscillations in Magnetoresistivity in Aluminium Single Crystals
- A New Method for the Determination of the Bulk Electrical Resistivity and the Bulk Mean Free Path in Metals
- Effect of Specimen Size in Ultrasonic Attenuation Measurement : Physical Acoustics
- Methods of Measurement and Management of Decay Curves of Quenched-In Vacancies
- Vacancy Annihilation to Non-Uniformly Distributed Dislocations in Quenched Aluminum
- Alternating Current Method for Measurement of Small Electrical Resistance of Metals
- Scattering of Electrons by Stacking Faults in Aluminum
- Experimental Determination of the Force-Distance Relation for the Interaction between a Dislocation and a Solute Atom
- Low-Temperature Amplitude-Dependent Internal Friction of Dislocation-Point Defect Systems : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Miscellaneous : Phonon, Structure etc.
- Dislocation-Solute Interaction Studied by Amplitude-Dependent Internal Friction in Al-0.01 at%Si Alloy
- Annealing Kinetics of Vacancies in Aluminum Single Crystals with Low Dislocation Density
- Anisotropy of Residual Electrical Resistivity in High-Purity Aluminum Single Crystals
- Deviations from Matthiessen's Rule on the Surface Scattering in Aluminum
- Migration Energy of Mono-Vacancy in Aluminum at High Temperature
- Anisotropy of Anomalous Longitudinal Magnetoresistance in High-Purity Aluminium Single Crystals
- Thermomigration of Scandium in Aluminum
- Anisotropy of the Apparent Resistivity in High-Purity Aluminium Single Crystals in Longitudinal Magnetic Fields
- Hydrogen Permeation Through Nickel
- Temperature Dependence of Positron Trapping to Dislocations in Aluminum
- Deviations from Matthiessen's Rule in Dilute Aluminum Alloys