Dislocation-Solute Interaction Studied by Amplitude-Dependent Internal Friction in Al-0.01 at%Si Alloy
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概要
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Amplitude-dependent internal friction was measured at the temperaturerange of 2-I 5 K on Al-0.01 at 3Si single crystal and 99.999 /Al. From the tem-perature dependence of applied strain under a constant internal friction, thebinding energy U., between a dislocation and a pinning obstacle was determinedas 0.5-0.8 eV in Al -0.01 at 3Si and 0.05 -0.06 eV in 99.999 3AI. The value of U.for Al-0.01 at3Si is very large and cannot be explained as a dislocation -asingle solute atom interaction. Silicon atoms in Al probably precipitated intoclusters t>ecause or the very tow solubility, ana dislocations were thought to thepinned strongly by Si clusters.
- 社団法人日本物理学会の論文
- 1984-11-15
著者
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Kosugi Toshio
Laboratory Of Crystal Physics Faculty Of Science Hiroshima University
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Kino Takao
Laboratory Of Crystal Physics Faculty Of Science Hiroshima Univ.
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Kino Takao
Laboratory of Crystal Physics,Faculty of Science,Hiroshima University
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