Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-06-15
著者
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Lacey Gales
Department Of Electronic And Electrical Engineering University Of Sheffield
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Whitehouse C
Department Of Electronic And Electrical Engineering University Of Sheffield
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Whitehouse Colin
Dra Electronics Division
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MOECK Peter
Department of Physics, University of Durham, Science Laboratories, South Road
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MIZUNO Kaoru
Department of Physics, University of Durham, Science Laboratories, South Road
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TANNER Brian
Department of Physics, University of Durham, Science Laboratories, South Road
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WHITEHOUSE Colin
Department of Electronic and Electrical Engineering, University of Sheffield
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SMITH Gilbert
Defense Evaluation and Research Agency Malvern
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KEIR Andrew
Defense Evaluation and Research Agency Malvern
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Whitehouse Colin
Department Of Electronic And Electrical Engineering University Of Sheffield
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Moeck Peter
Department Of Physics University Of Durham Science Laboratories South Road
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Moeck Peter
Department Of Physics (m/c 273) University Of Illinois At Chicago
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Tanner Brian
Department Of Physics Durham University
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Tanner Brian
Department Of Physics University Of Durham Science Laboratories South Road
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Mizuno Kaoru
Department Of Physics Shimane University
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Mizuno Kaoru
Department Of Physics University Of Durham Science Laboratories South Road
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Mizuno Kaoru
Department Of Material Science Faculty Of Science And Engineering Shimane University
関連論文
- Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation
- Indistinct Defect Images in Topographs of Nearly Perfect Aluminum Crystals Just Prior to Appearance of Dislocation Loops : Condensed Matter: Structure, etc.
- Synchrotron Radiation Topographic Camera for Continuous Observation
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction
- Antiphase Domain Structure in Gd_Sc_ Single-Crystal Alloys
- Application of atomic scale STEM techniques to the study of interfaces and defects in materials
- Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals
- Application of High-Resolution Film for Lithography to Synchrotron X-Ray Topography
- Improved High-Temperature X-Ray Lang Camera
- Grazing Incident X-Ray Topographs of Heteroepitaxial ZnSe Films on GaAs Substrates
- New Vacancy Source in Ultrahigh-Purity Aluminum Single Crystals with a Low Dislocation Density (Condensed Matter : Structure, Mechanical and Thermal Properties)
- Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
- Low-Energy Focused Ion Beam Doping during Molecular Beam Epitaxial Growth for the Fabrication of Three-Dimensional Devices: The Effect of Dopant Surface Segregation
- Evidence of Interactions between Domain Walls and a Dislocation Bundle in Synchrotron X-Radiation Topographs of Iron Whisker Crystals
- Visualization of Hydride in Titanium and Titanium-Aluminide by Refraction-Enhanced X-ray Imaging Technique
- Grazing Incident X-Ray Topographs of Heteroepitaxial ZnSe Films on GaAs Substrates
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction