Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-09-18
著者
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Mizuno K
Kanagawa Univ. Yokohama Jpn
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Mizuno Kaoru
Department Of Physics Shimane University
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Takenoshita Hiroshi
Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture
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MANAGAKI Masahiro
Semiconductor Division, Hanno Factory, Shindengen Electric Mfg.
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Mizuno Kaoru
Department Of Material Science Faculty Of Science And Engineering Shimane University
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Managaki Masahiro
Semiconductor Division Hanno Factory Shindengen Electric Mfg.
関連論文
- Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation
- Indistinct Defect Images in Topographs of Nearly Perfect Aluminum Crystals Just Prior to Appearance of Dislocation Loops : Condensed Matter: Structure, etc.
- Synchrotron Radiation Topographic Camera for Continuous Observation
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction
- Antiphase Domain Structure in Gd_Sc_ Single-Crystal Alloys
- Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy
- Freezing of Interstitial-Type Dislocation Loops Grown as Vacancy Sources in Nearly Perfect Aluminum Crystals
- Application of High-Resolution Film for Lithography to Synchrotron X-Ray Topography
- Improved High-Temperature X-Ray Lang Camera
- New Vacancy Source in Ultrahigh-Purity Aluminum Single Crystals with a Low Dislocation Density (Condensed Matter : Structure, Mechanical and Thermal Properties)
- Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
- p-CuGa_In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution
- LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution
- Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
- The Hall Measurement of Heat-Treated CuInSe_2
- Preparation and some Properties of CuInSe_2 on ZnSe Heterojunction Grown by LPE : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
- Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution
- Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution
- Studies on Ultrasonic Butt Welding Using 19 kHz Vibration Systems : High Power Ultrasonics
- Effective Range of Observable Depth by Electron-Acoustic Microscopy Using Two-Phase Electron Acoustic Signals : Ultrasonic Measurement
- Electron-Acoustic Microscopic Study on Dislocation Lines in the Base Region of npn Si-Tr : Ultrasonic Microscopy and Nondestructive Testing
- Visualization of Hydride in Titanium and Titanium-Aluminide by Refraction-Enhanced X-ray Imaging Technique
- Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
- Site of Electron Acoustic Signal Generation from Junction of an npn Si Transistor-Chip under Bias Application : Physical Acoustics
- Depth Directional Study by Electron-Acoustic Microscopy : Photoacoustic Spectroscopy and Ultrasonic Microscopy
- Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
- Nondestructive Profiling of Transistor-Chip under Bias Application by Electron-Acoustic Microscopy : Ultrasonic Imaging and Microscopy
- Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
- Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
- The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
- Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
- A Study of Silicon Transistor-Tip by Electron-Acoustic Microscopy
- Grazing Incident X-Ray Topographs of Heteroepitaxial ZnSe Films on GaAs Substrates
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction
- LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute