p-CuGa_<1-x>In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution

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概要

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• p-CuGa_<1-x>In_xS_2/n-ZnSe heterojunction was made by the LPE method from the In solution of solute CuGaS_2 and solvent In, though a p-CuGaS_2/n-ZnSe heterojunction was not obtained. The reflection electron diffraction pattern from the interface indicates an epitaxial growth. The measurements of EPMA have shown that Zn and Se decrease monotonically, and Cu, Ga and S increase monotonically, from the substrate to the over-growth layer. Indium from the solvent showed a monotonic increase from the substrate to the over-growth layer. The maximum temperature T_m of 650℃ and cooling rate of 0.5℃/min were taken. The epitaxial layer is represented by the formula CuGa_<1-x>In_xS_2, where x was 0.16 for T_m of 650℃. It is suggested that a complete series of solid solutions (CuGa_<1-x>In_xS_2)_<1-y>-(2ZnSe)_y alloys is formed. The thickness of the mixedcrystal layer was 4.9 μm.

• 社団法人応用物理学会の論文
• 1981-10-05

著者

• NAKAU Tanehiro

  Department of Electronics, University of Osaka Prefecture

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

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