Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias

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概要

• 論文の詳細を見る

• An observation area was first selected using scanning electron microscopy (SEM)-mode images. Switching to an electron-acoustic microscopy (EAM)-mode, the area selected from SEM images was then studied with EAM images using electron-acoustic signals. We carried out nondestructive internal observation at the fixed area of an Si transistor chip put into operation by application of bias voltage (V_b) in situ by EAM. The results showed that (a) the distribution of potential caused by V_b application in the chip could be determined nondestructively from the change in the contrast of EAM images and (b) the internal structure of devices in operation could be observed nondestructively by EAM.

• 社団法人応用物理学会の論文
• 1994-05-30

著者

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

• Takenoshita Hiroshi

  Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture

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• Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
• Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
• The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
• Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
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• LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute

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