LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution

スポンサーリンク

概要

• 論文の詳細を見る

• The heteroepitaxy of ZnSnAs_2 on a ZnSe substrate from a Sn solution has been studied by the LPE method. The lattice mismatch of this combination is 3.26%. The optimum growth conditions were a maximum temperature T_m of 600℃ and a cooling rate CR of 0.5℃/min. The epitaxial growth was confirmed by electron diffraction. From EPMA, the (ZnSnAs_2)_<1-x>-(2ZnSe)_x alloys were found to form a solid solution. The thickness of the mixed crystal layer was 0.74 μm. The electrical properties of the over-growth layer showed σ=11.9Ω^<-1>-cm^<-1>, μ_H=78.4 cm^2/Vs and N_A=1.30×10^<18> cm^<-3> at 300 K.

• 社団法人応用物理学会の論文
• 1982-04-20

著者

• NAKAU Tanehiro

  Department of Electronics, University of Osaka Prefecture

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

関連論文

• Transient Photocurrent in Amorphous (As_2Se_3):Te Thin Films
• Transient Photodischarge Characteristics of Photoconductors with Dispersive Transport
• Isothermal Photocurrent Transient Spectroscopy of Gap States in Amorphous Chalcogenide Semiconductors
• Gap State Spectroscopy in Amorphous Selenium Photoreceptors
• Effect of Photo-Induced Microcrystallization on In_x(Si_Se_)_ Film-ITO Solar Cells : I-3: NEW STRUCTURE AND ADVANCED MATERIAL (1)
• Effect of Electron Traps on Residual Voltage in Chalcogenide Photoreceptors
• The Density of Localized States in Amorphous In_xSe_ Thin Films
• Some Properties of Copper Sulfide Films Related with the Conductivities
• X-Ray Micrographic Observation of Imperfections in Si Wafer near the Oxide Film Edge before and after the Localized Diffusion
• Effects of Heat Treatment of CdSe Single Crystals in Se Vapor
• Electrical Conductivity of α-Fe_2O_3
• Anomalous X-Ray Images of Imprefections in Boron-Diffused Silicon
• A Theoretical Investigation of the Residual Voltage on Electrophotographic Plates
• Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy
• Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
• Bonds in CdSiP_2 Studied by Thermal Expansion Coefficients
• Birefringence in CdSiP_2
• p-CuGa_In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution
• LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution
• Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
• The Hall Measurement of Heat-Treated CuInSe_2
• Penetration Depth of Diffusion-Induced Dislocations
• Preparation and some Properties of CuInSe_2 on ZnSe Heterojunction Grown by LPE : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
• Inhomogeneous Distributuon of Dislocations in Phosphorus-Diffused Silicon
• Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution
• X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses
• Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution
• Effective Range of Observable Depth by Electron-Acoustic Microscopy Using Two-Phase Electron Acoustic Signals : Ultrasonic Measurement
• Electron-Acoustic Microscopic Study on Dislocation Lines in the Base Region of npn Si-Tr : Ultrasonic Microscopy and Nondestructive Testing
• Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
• Site of Electron Acoustic Signal Generation from Junction of an npn Si Transistor-Chip under Bias Application : Physical Acoustics
• Depth Directional Study by Electron-Acoustic Microscopy : Photoacoustic Spectroscopy and Ultrasonic Microscopy
• Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
• Nondestructive Profiling of Transistor-Chip under Bias Application by Electron-Acoustic Microscopy : Ultrasonic Imaging and Microscopy
• Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
• Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
• The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
• Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
• A Study of Silicon Transistor-Tip by Electron-Acoustic Microscopy
• LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute

もっと見る 閉じる

スポンサーリンク