LPE Growth of CuGa_<1-x>In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute

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概要

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• Liquid Phase Epitaxial (LPE) growth using (CuGaS_2)_<1-Y>-(CuInS_2)_Y as a solute, ZnSe as a substrate and In as a solvent has been studied by varying Y under the growth conditions of a maximum temperature T_m of 700 and 650℃, and constant cooling rate CR of 0.5℃/min. The over-growth layer is confirmed to be epitaxial CuGa_<1-x>In_xS_2 by means of EPMA and electron diffraction under the growth conditions of T_m=700℃ for all Y and T_m=650℃ for Y≦0.7 for T_m=700℃, x is not proportional to Y and is almost constant for low Y. For T_m=650℃, the x-Y relation is similar to that for T_m=700℃, but the In content is higher than that for T_m=700℃. When Y>0.8, the growth rate and Cu content in the overgrowth layer rapidly decrease, where the ternary compound and/or ternary-ternary alloy growth layer could no longer be obtained. Thus, the range of epitaxial growth was Y≦0.7 for T_m=650℃. The above results are discussed and compared with those of our previous reports.

• 社団法人応用物理学会の論文
• 1984-04-20

著者

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, University of Osaka Prefecture

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