Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence on the diffusion coefficients of Al, Ga and In in ZnSe was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the cathodoluminescence mode of SEM, The following relations were obtained: D_<Al>=1.18×10^<-1> exp(-1.92eV/kT), D_<Ga>=6.76×10^<-2> exp(-1.80eV/kT) and D_<In>=4.45×10^<-1> exp (-1.84 eV/kT).
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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Takenoshita Hiroshi
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Takenoshita Hiroshi
Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture
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Sawai K
Univ. Osaka Prefecture Sakai Jpn
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Sawai Katsunori
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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KIDO Kazutaka
Department of Electronics, College of Engineering, University of Osaka Prefecture
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Kido Kazutaka
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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