Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-05-30

著者

• Tabuchi Masayuki

  Kita-itami Works Mitsubishi Electric Corporation

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture

• Takenoshita H

  Nagasaki Univ. Nagasaki Jpn

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

関連論文

• Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation
• Specific Aspects of X-Ray Diffraction on Statistically Distributed QDs in Perfect Crystal Matrix (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
• Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy
• Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
• p-CuGa_In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution
• LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution
• Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
• The Hall Measurement of Heat-Treated CuInSe_2
• Preparation and some Properties of CuInSe_2 on ZnSe Heterojunction Grown by LPE : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
• Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution
• Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution
• Effective Range of Observable Depth by Electron-Acoustic Microscopy Using Two-Phase Electron Acoustic Signals : Ultrasonic Measurement
• Electron-Acoustic Microscopic Study on Dislocation Lines in the Base Region of npn Si-Tr : Ultrasonic Microscopy and Nondestructive Testing
• Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
• Site of Electron Acoustic Signal Generation from Junction of an npn Si Transistor-Chip under Bias Application : Physical Acoustics
• Depth Directional Study by Electron-Acoustic Microscopy : Photoacoustic Spectroscopy and Ultrasonic Microscopy
• Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
• Nondestructive Profiling of Transistor-Chip under Bias Application by Electron-Acoustic Microscopy : Ultrasonic Imaging and Microscopy
• Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
• Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
• The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
• Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
• A Study of Silicon Transistor-Tip by Electron-Acoustic Microscopy
• LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute

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