Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution

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概要

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• Heteroepitaxy of CuInS_2 has been carried out on ZnSe by the LPE method from an In solution. The optimum growth conditions were a maximum temperature T_m of 700℃ and a cooling rate CR of 0.5℃/min. LPE growth was not successful when T_m was 500-650℃. The critical value of T_m for successful LPE growth was near 700℃. The coefficient κ_<LPE> defined as the ratio of the optimum T_m to the melting temperature of the solute, was than those for other chalcopyrite materials investigated previously. The optimum growth conditions are considered to be related to the energies of formation and melting temperatures of the substrate and solute, and the I_2-VI, III_2-VI_3 and other compounds produced in the LPE system.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• NAKAU Tanehiro

  Department of Electronics, University of Osaka Prefecture

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

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