X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-12-05

著者

• Kuroda Haruo

  Department of Chemistry, Faculty of Science, The University of Tokyo

• ITOH Nobuo

  Department of Pathology, Sinshu University Medical School

• NAKAU Tanehiro

  Department of Electronics, University of Osaka Prefecture

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• Kuroda Haruo

  Department Of Electronics College Of Engineering University Of Osaka Prefecture:(present Address)osa

• Kuroda Haruo

  Department Of Chemistry Faculty Of Science The University Of Tokyo

• MORIKAWA Yasumitsu

  Department of Electronics, College of Engineering, University of Osaka Prefecture

• Itoh Nobuo

  Department Of Electronics Colledge Of Engineering University Of Osaka Prefecture

• Itoh Nobuo

  Department Of Clinical Pathology Iida Municipal Hospital

• Morikawa Yasumitsu

  Department Of Electronics College Of Engineering University Of Osaka Prefecture

• Morikawa Yasumitsu

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

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