Characterization of Thin Surface Layers by an X-Ray Double-Crystal Method with a Sample Designated as the First Crystal
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It is shown that thin surface layers can be sensitively characterized by using an X-ray double-crystal method, in which a sample designated as the first crystal is irradiated with incident X-rays at a low glancing angle and the X-rays reflected from the surface layer are analyzed by a second crystal. The applicability is proved by observing GaAs crystals lapped with fine abrasives. Deviation of the full width at half-maximum (FWHM) of the rocking curve for lapped crystals from that of a perfect crystal is a few times larger than the value obtained by the conventional method in which the sample is the second crystal.
- 社団法人応用物理学会の論文
- 1992-08-01
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