Crystallographic Characterization of ZnS_xSe_<1-x> Epitaxial Films : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
Crystalline quality of ZnS_xSe_<1-x> films grown on GaAs substrates has been investigated in detail using the X-ray double-crystal method. Respective fluctuations in orientation and spacing of lattice planes are measured separately. It is shown that the crystalline quality of ZnS_xSe_<1-x> films is noticeably affected by the fluctuation in orientation caused by lattice mismatch and partly by the fluctuation in spacing which may be associated with an inhomogeneous distribution of Se and S atoms. Improvement of the quality by lattice matching is due to a reduction of fluctuation in orientation.
- 社団法人応用物理学会の論文
- 1988-05-20
著者
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Ogawa Haruki
Semiconductor Division Matsushita Electronics Corporation
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Itoh Nobuo
Department Of Electronics Colledge Of Engineering University Of Osaka Prefecture
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Itoh Nobuo
Department Of Clinical Pathology Iida Municipal Hospital
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OKAMOTO Keiichi
Department of Electronics, Colledge of Engineering, University of Osaka Prefecture
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KAWABATA Toshiharu
Semiconductor Division, Matsushita Electronics Corporation
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KOIKE Susumu
Semiconductor Division, Matsushita Electronics Corporation
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Koike Susumu
Semiconductor Division Matsushita Electronics Corporation
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Okamoto Keiichi
Department Of Electronics Colledge Of Engineering University Of Osaka Prefecture
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Kawabata Toshiharu
Semiconductor Division Matsushita Electronics Corporation
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