Annealing Behaviour of Stress in Sb-Implanted Si
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概要
- 論文の詳細を見る
Annealing behaviour of stress in silicon implanted with high dose Sb ions is investigated by X-ray topographic observations following each step of the sequential annealing. The result shows that there are three annerling stages with differing stresses:(I)compressive stress in the process from as-implanted state to the 500℃ annealing, (II) tensile stress at early stage of the 600℃ annealing, and (III) compresstive stress after annealing at 600℃ for a long time and until the stress is annealed out at 900℃. The anomalous changes at about 600℃ are discussed. The occurrence of the tensile stress in stage II is attributed to the lateral contraction of the implanted region during the regrowth of amorphous silicon produced by implantation.
- 社団法人応用物理学会の論文
- 1978-06-05
著者
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Nagami Kouichi
Department Of Electronics Collge Of Engineering University Of Osaka Prefecture
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Itoh Nobuo
Department Of Electronics Collge Of Engineering University Of Osaka Prefecture
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Itoh Nobuo
Department Of Clinical Pathology Iida Municipal Hospital
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NAKAKU Tanehiro
Department of Electronics, Collge of Engineering, University of Osaka Prefecture
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MORIKAWA Yasumits
Department of Electronics, Collge of Engineering, University of Osaka Prefecture
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Morikawa Yasumits
Department Of Electronics Collge Of Engineering University Of Osaka Prefecture
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Nakaku Tanehiro
Department Of Electronics Collge Of Engineering University Of Osaka Prefecture
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