An X-Ray Diffraction Method for Characterization of Several Lattice-Matched Heteroepitaxial Films
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概要
- 論文の詳細を見る
It has been considered that when the structure amplitude lFl for a quasi-forbidden reflection of a lattice-matched heteroepitaxial film is considerably larger than that of the substrate or the other layer, for example, for the 200 reflection of InGaP/GaAs, only the film can be observed and characterized. To show the validity of this method, the respective layers in an InGaAs/InP/(100)GaAs structure have been characterized; the upper InGaAs layer, the inner InP layer and the GaAs substrate have been observed using the 311_A reflection with a very small glancing angle (〜0.5°), the 200 reflection of the quasi-forbidden reflection and the 400 reflection, respectively.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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PAK Kangsa
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Wakahara Akihiro
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Itoh Nobuo
Department Of Clinical Pathology Iida Municipal Hospital
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Sato Tomohiko
Department Of Chemistry Faculty Of Science Kanagawa University
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Sato Tomohiko
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yoshida Akira
Department Of Cardiology Kyoto National Hospital
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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Sato Tomohiko
Department Of Cardiovascular Medicine Graduate School Of Medicine University Of Tokyo
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