Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam
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概要
- 論文の詳細を見る
We introduced a new growth/doping method for selective areas and demonstrated the in situ maskless selective doping of GaAs films using a low-energy focused ion beam. This in situ growth and doping method is thought to be essential in maskless selective device fabrication. In our experiment the in situ doping of n-GaAs and p-GaAs was conducted successfully. The crystalline quality and resistivity of the films showed good results at an incident ion beam energy of 30–60 eV. The Hall mobility of Sn-doped GaAs films was 2170 cm2$\cdot$V-1$\cdot$s-1 at a carrier concentration of $2.7 \times 10^{17}$ cm-3, and that of Be-doped GaAs films was 49.1 cm2$\cdot$V-1$\cdot$s-1 at a carrier concentration of $1.19 \times 10^{18}$ cm-3. In this experiment, the possibility of maskless selective microdevice fabrication was presented.
- Japan Society of Applied Physicsの論文
- 2004-06-01
著者
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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NISHIYAMA Tomokazu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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NUMATA Kazutoshi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Kim Eum-mi
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Pak Kangsa
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibariga-oka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Kim Eum-Mi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibariga-oka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Numata Kazutoshi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibariga-oka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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