Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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Takano Yasushi
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Takano Yasushi
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th
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Takagi Yuji
Information And Communications Research Center Matsushita Electric Industrial Co. Ltd.
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Takagi Y
Tokyo Inst. Technology Yokohama‐shi Jpn
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Pak K
Toyohashi Univ. Technol. Aichi Jpn
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PAK Kangsa
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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YONEZU Hiroo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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LOPEZ Maximo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Lo´pez M
Optoelectronics Technology Research Laboratory
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Takagi Yoshihiro
Institute For Molecular Science:(present Address) Himeji Technical University Faculty Of Science
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Takagi Yoshihiro
Himeji Institute Of Technology Faculty Of Science
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Lopez Maximo
Optoelectronics Technology Research Laboratory
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Yonezu Hiroo
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Tagaki Yuji
Information & Communications Research Center Matsushita Electric Industrial Co. Ltd.
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Takano Yoshinobu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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