Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-06-01
著者
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Pak K
Toyohashi Univ. Technol. Aichi Jpn
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PAK Kangsa
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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NISHIYAMA Tomokazu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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KIM Eum-Mi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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NUMATA Kazutoshi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Kim Eum-mi
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Numata Kazutoshi
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibariga-oka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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Nishiyama Tomokazu
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibariga-oka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
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- Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam
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- Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam