Surface Morphology of LPE Grown InP
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概要
- 論文の詳細を見る
LPE surface morphology of InP was studied both in vertical and horizontal growth systems.In both systems, the same wave morphology was observed. This morphology was investigated experimentally for various growth conditions. The wavelength was found to decrease as supersaturation was increased, while it was almost unchanged when the substrate misorientations were varied. The liquid phase etching revealed quite smooth surfaces in contrast to the wave morphology of the growth. The present observations were compared with those of other semiconductors to find general rules governing the formation of growth morphology.
- 社団法人応用物理学会の論文
- 1977-06-05
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Pak Kangsa
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Pak Kangsa
Department Of Electronics Faculty Of Engineering Nagoya University
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Uchiyama Susumu
Department Of Biotechnology Graduate School Of Engineering Osaka University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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