MBE Growth of GaAs_<1-x>Sb_x and In_yGa_<1-y>As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter
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概要
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The solid composition of GaAs_<1-x>Sb_x and In_yGa_<1-y>As grown on a stepped surface by molecular beam epitaxy is discussed. The experimental results show that the concentration of Sb or In in the epitaxial layer decreases rapidly with the growth temperature and that Sb becomes lower and In higher in concentration with increasing off-angle from the (100) surface. In order to explain these phenomena, the BCF theory is successfully applied.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Mochizuki Kazuhiro
Department Of Electronic Engineering The Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department Of Electronic Engineering The Faculty Of Engineering The University Of Tokyo
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