Plasma Spreading and Turn-On Delay in a Power Thyristor
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概要
- 論文の詳細を見る
By measuring the potential distribution in a 50 A-600V reverse blocking thyristor, the turn-on actions of the n-emitter junction J_3 and the collector junction J_2 were investigated. The turn-on delay time T_d associated with the plasma spreading, defined as the difference between the turn-on times of J_3 and J_2, was found to be very large in comparison with the turn-on delay time τ_d for the onset of the anode current through the device. The width of the transient region between the ON-and the OFF-region was found to be of the order of one mm and to increase by increaisng the anode current I_a. By increasing I_a, the lateral current in the transient region is also increased, and this reduces the plasma spreading velocity.
- 社団法人応用物理学会の論文
- 1978-07-05
著者
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Nishinaga Tatau
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address)toyohashi Univer
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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