Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
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概要
- 論文の詳細を見る
The time-of-flight technique was studied as a method of measuring the the minority-carrier mobility in p-type Si. Theambipolar diffusion equations were solved numerically, and it was found that the transit time is given by the time fromthe initial rise to the shoulder at the fall of the induced current waveform rather than the half-height width, even if theambipolar effects are strong. For example, the transit time defined by the former agreed with the true transit time withinan error of 2%, while the latter gave an error of up to 10%. To demonstrate the usefulness of the method, the driftmobility of electrons in p-type silicon was studied and the results were compared with those for majority ones.
- 社団法人応用物理学会の論文
- 1985-06-20
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Morohashi Makoto
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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