350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

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概要

• 論文の詳細を見る
• 2004-04-01

著者

• AMANO Hiroshi

  Faculty of Horticulture, Chiba University

• IWAYA Motoaki

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• KAMIYAMA Satoshi

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• AKASAKI Isamu

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Akasaki I

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Kashima Takayuki

  Department Of Materials Science And Engineering And Nano-factory Meijo University

• Iwaya M

  Faculty Of Science And Technology Meijo University

• MIYAZAKI Atsushi

  Faculty of Science and Technology, Meijo University

• HONSHIO Akira

  Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University

• MIYAKE Yasuto

  Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University

• KAWASHIMA Takeshi

  Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University

• IIDA Kazuyoshi

  Faculty of Science and Technology, High-Tech Research Center

• KASUGAI Hideki

  Faculty of Science and Technology, High-Tech Research Center

• MISHIMA Syunsuke

  Faculty of Science and Technology, High-Tech Research Center

• KAMBA Hideto

  Toyoko Kagaku Co Ltd.

関連論文

• 台湾中西部におけるカンザワハダニの越冬生態と休眠特性
• Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
• Microscopic Investigation of Al_Ga_N on Sapphire
• Stress and Defect Control in GaN Using Low Temperature Interlayers
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
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• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
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• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
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• VPE Growth of ZnS Incorporating Indium on GaP
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
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• Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
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• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
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• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
• The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
• Present and Future Nitride-Based Devices
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
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• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering in ZnS_xSe_ Alloys
• Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
• Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
• A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
• Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
• Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
• Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
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• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Etch Patterns in Germanium
• On the Structural Properties of Vapor-Deposited Germanium Layers
• Experimental Studies of Impurity Doping in Vapor Growth of Ge
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission
• Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
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• Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
• Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
• Microstructures of GaInN/GaInN Superlattices on GaN Substrates
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

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