Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-06-15

著者

• Balakrishnan Krishnan

  名城大学理工学部材料機能工学科

• Balakrishnan Krishnan

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• AMANO Hiroshi

  Faculty of Horticulture, Chiba University

• IWAYA Motoaki

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• KAMIYAMA Satoshi

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• AKASAKI Isamu

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Akasaki I

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• TSUDA Michinobu

  Single Crystal Division, Kyocera Corporation

• Iwaya M

  Faculty Of Science And Technology Meijo University

• 天野 洋

  Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ

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