Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-15

著者

• Balakrishnan Krishnan

  名城大学理工学部材料機能工学科

• Balakrishnan Krishnan

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• AMANO Hiroshi

  Faculty of Horticulture, Chiba University

• Imura Masataka

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• Nakano Kiyotaka

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• Fujimoto Naoki

  Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University

• OKADA Narihito

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• IWAYA Motoaki

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• KAMIYAMA Satoshi

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• AKASAKI Isamu

  Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University

• NORO Tadashi

  Ceramic Operation, Ibiden Co., Ltd.

• TAKAGI Takashi

  Ceramic Operation, Ibiden Co., Ltd.

• BANDOH Akira

  Corporate R&D Center, Showa-Denko K.K.

• Takeuchi Tetsuya

  Department Of Electrical And Electronic Engineering Meijo University

• Kamiyama S

  Faculty Of Science And Technology Meijo University

• Kamiyama Satoshi

  Ulsi Device Development Laboratories Nec Corporation

• Bandoh Akira

  Corporate R&d Center Showa Denko K.k.

• Akasaki I

  Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Iwaya M

  Faculty Of Science And Technology Meijo University

• Tanaka T

  Ceramic Operation Ibiden Co. Ltd.

• 天野 洋

  Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ

関連論文

• Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy
• GaSb/InSb/GaSbサンドウィッチ構造における溶解過程に及ぼす重力対流の役割
• Magnetization Process of Haldane Materials TMNIN and NINAZ
• 台湾中西部におけるカンザワハダニの越冬生態と休眠特性
• 落下塔利用の微小重力環境下におけるInGaSb突起物形成過程のその場観察
• 落下塔利用による微小重力環境下における半導体の融解と凝固実験
• 落下塔利用による微小車力環境下における半導体の融解と凝固実験
• 航空機利用による微小重力環境下におけるInGaSb 半導体の結晶成長
• InSb融液中へのGaSb溶解に対する自然対流とマランゴニ対流効果
• Multiband Superconductivity in Heavy Fermion Compound CePt_3Si without Inversion Symmetry : An NMR Study on a High-Quality Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_Cr_xN Films
• 回転ブリッジマン法を用いたInGaSb結晶成長における炉内温度に対するアンプル回転効果の数値解析 : バルク成長III
• Magnetization Measurement of NENP and NINO in High Magnetic Field
• InAs組成変換基板上への高In組成比InGaAs成長 : エピキタシャル成長IV
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• 組成変換InAs基板上への高In組成比・高品質In_xGa_Asブリッジ成長
• Study on the LPE growth of InGaAS pyramidal layers on (100) GaAs substrates
• Coalescence of ELO layers of InGaAS grown on patterned (111) GaAs by LPE
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• 液相成長法による(100)GaAs基板上へのInGaAsピラミッド成長
• A Quantum Spin Chain in High Magnetic Fields
• LPE growth of In_xGa_1-xSb pyramidal epilayer on GaSb(001) patterned substrate
• Growth of In_xGa_As Epilayers on Different Types of Patterned GaAs(100) Substrates
• Study on the LPE Growth of InxGaAs Bridge and ELO Layers on GaAs{111} Substrates
• EXPERIMENTAL AND NUMERICAL ANALYSES OF CRYSTALLIZATION PROCESSES OF In_Ga_Sb UNDER DIFFERENT GRAVITY CONDITIONS
• High Field Magnetization of Cr-Dimer Complexes
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying 5/3 Ratio
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
• Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
• Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
• 落下塔利用による微小重力環境下における半導体の融解と凝固実験
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• 航空機利用による微小重力環境下と地上におけるInGaSb半導体の結晶成長
• Growth of InxGa1-xAs EPilayers on Different Types of Patterned GaAs(100) Substrates
• Electronic Structures of Bi_4Ti_3O_ Thin Film and Single Crystal Determined by Resonant Soft-X-Ray Emission Spectroscopy
• Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
• Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
• Preparation and Properties of (Pb,La)TiO_3 Pyroelectrie Thin Films by RF-Magnetron Sputtering
• Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
• Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
• Electronic Structure of Bi_4Ti_3O_ Thin Film by Soft-X-Ray Emission Spectroscopy
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Unidirectionally Textured CaBi_4Ti_4O_ Ceramics by the Reactive Templated Grain Growth with an Extrusion
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Piezoelectric Properties of Bismuth Layer-Structured Ferroelectric Ceramics witha Preferred Orientation Processed by the Reactive Templated Grain Growth Method
• Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Optical Properties of Strained AlGaN and GaInN on GaN
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs (Special Issue on Quarter Micron Si Device and Process Technologies)
• Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories)
• High-Power UV-Light-Emitting Diode on Sapphire
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
• High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
• Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
• Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
• 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
• Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
• The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
• Present and Future Nitride-Based Devices
• Study of a simple sensor for stress history measurements of a structural member using a piezoelectric element
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
• Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
• Torque Measurements of Ferromagnetic Mn-Al Multilayered Films
• Magnetic Properties of Mn-Al Multilayered Films
• Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
• Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
• Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Diversity and abundance of phytoseiid mites on Magnolia hypoleuca Siebold et Zuccarini, a candidate source of natural enemies in natural vegetation
• Chemical Ecology of Astigmatid Mites. : XLVI Neryl Formate, the Alarm Pheromone of Rhizoglyphus setosus MANSON (Acarina: Acaridae) and the Common Pheromone Component among Four Rhizoglyphus Mites
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Attractancy of Alcohols Isolated from Culture Filtrates of Fusarium Fungi for the Robine Bulb Mite, Rhizoglyphus robini CLAPAREDE (Acari : Acaridae), in Sand
• Microstructures of GaInN/GaInN Superlattices on GaN Substrates
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
• Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
• Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
• High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
• Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
• Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
• Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る 閉じる

スポンサーリンク