Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The metalorganic vapor phase epitaxial (MOVPE) growth of AlGaN on AlN-coated sapphire at a temperature higher than 1,200 °C was carried out. Compared with that at a low-temperature growth regime in which alloy composition is determined by the flow rates of metalorganic Ga and Al sources, the solid composition of AlGaN is found to be strongly affected by thermodynamics.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
-
Imura Masataka
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
-
Fujimoto Naoki
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
-
Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
-
Akasaki Isamu
Faculty Of Science And Technology Meijo University
-
Okada Narihito
Faculty Of Science And Technology 21st-century Coe Program "nano-factory" Meijo University
-
Iwaya Motoaki
Faculty Of Science And Technology Meijo University
-
Balakrishnan Krishnan
Faculty Of Science And Technology 21st Century Coe Nano-factory Meijo University
-
Amano Hiroshi
Faculty Of Horticulture Chiba University
-
Takagi Takashi
Ibiden Co. Ltd.
-
Kitano Tsukasa
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Akasaki Isamu
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Balakrishnan Krishnan
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Narita Gou
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Shimono Kenji
Ibiden Co., Ltd., 300, Aoyanagi-cho, Ogaki, Gifu 503-8503, Japan
-
Noro Tadashi
Ibiden Co., Ltd., 300, Aoyanagi-cho, Ogaki, Gifu 503-8503, Japan
-
Bandoh Akira
Showa Denko K. K. 1-1-1 Ohodai, Midori-ku, Chiba 267-0056, Japan
-
Narita Gou
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Okada Narihito
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Amano Hiroshi
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Fujimoto Naoki
Faculty of Science and Technology, 21st COE "Nano-Factory" Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
関連論文
- 台湾中西部におけるカンザワハダニの越冬生態と休眠特性
- EDM Characteristics of CVD-Carbon Electrode
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- High-Temperature Metal-organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying 5/3 Ratio
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- High-Power UV-Light-Emitting Diode on Sapphire
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
- Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Diversity and abundance of phytoseiid mites on Magnolia hypoleuca Siebold et Zuccarini, a candidate source of natural enemies in natural vegetation
- Chemical Ecology of Astigmatid Mites. : XLVI Neryl Formate, the Alarm Pheromone of Rhizoglyphus setosus MANSON (Acarina: Acaridae) and the Common Pheromone Component among Four Rhizoglyphus Mites
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Attractancy of Alcohols Isolated from Culture Filtrates of Fusarium Fungi for the Robine Bulb Mite, Rhizoglyphus robini CLAPAREDE (Acari : Acaridae), in Sand
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
- Correlation between Device Performance and Defects in GaInN-Based Solar Cells
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
- Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- D213 Differential toxicity of selected pesticides to Diadegma semiclausum (Hellen) and Oomyzus sokolowskii (Kurdjumov), potential parasitoids of the diamondback moth in Southeast Asia and Pacific
- Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
- 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
- High-Power UV-Light-Emitting Diode on Sapphire
- Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
- Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
- Correlation between Device Performance and Defects in GalnN-Based Solar Cells
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
- Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
- Combination of Indium--Tin Oxide and SiO
- Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors