Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers

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概要

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• We achieved simultaneous two emissions from a single light emitting diode containing violet and blue GaInN/GaN quantum well active regions separated with an intermediate layer. By adjusting a thickness of a Mg-doped region in the intermediate layer, an intensity ratio between violet and blue emissions was changed, caused by different carrier distributions in the two active regions. The intensity ratio from two active regions was also changed by changing an amount of current injection. An unintentional Mg incorporation into the active region above the Mg-doped intermediate layer was observed, which is due to Mg memory effect.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Kaga Mitsuru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Takatoshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Suzuki Tomoyuki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Matsui Kenjo

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Koji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Takeuch Tetsuya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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