Morita Takatoshi | Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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概要

• Morita Takatoshiの詳細を見る
• 同名の論文著者
• Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japanの論文著者

関連著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Kaga Mitsuru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Takatoshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Kuwano Yuka

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Kouji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yagi Kouta

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Suzuki Tomoyuki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Matsui Kenjo

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Koji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Takeuch Tetsuya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Takeuchi Tetsuya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Iwaya Motoaki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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著作論文

• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
• GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)

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