Suzuki Tomoyuki | Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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概要

• Suzuki Tomoyukiの詳細を見る
• 同名の論文著者
• Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japanの論文著者

関連著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Suzuki Tomoyuki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Kaga Mitsuru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Watanabe Masahiro

  Faculty Of Environmental Earth Science Hokkaiod University:center For Climate System Research The University Of Tokyo

• Yasuda Toshiki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Takatoshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yagi Kouta

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Nakashima Tsubasa

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Matsui Kenjo

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Koji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Takeuch Tetsuya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Naniwae Kouichi

  EL-SEED Corporation, Nagoya 468-0073, Japan

• Hirano Keisuke

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Kitano Tsukasa

  EL-SEED Corporation, Nagoya 468-0073, Japan

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著作論文

• Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
• Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)

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