Kaga Mitsuru | Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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概要
- Kaga Mitsuruの詳細を見る
- 同名の論文著者
- Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japanの論文著者
関連著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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Kaga Mitsuru
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
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Morita Takatoshi
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yamashita Kouji
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yagi Kouta
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Kuwano Yuka
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Suzuki Tomoyuki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Matsui Kenjo
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yamashita Koji
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Takeuch Tetsuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Takeuchi Tetsuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Akasaki Isamu
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Amano Hiroshi
Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Naniwae Kouichi
EL-SEED Corporation, Nagoya 468-0073, Japan
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Hirano Keisuke
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Kitano Tsukasa
EL-SEED Corporation, Nagoya 468-0073, Japan
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Takeda Kenichirou
Faculty of Science and Engineering, Meijo University, Nagoya 468-8502, Japan
著作論文
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)