Yagi Kouta | Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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概要

• Yagi Koutaの詳細を見る
• 同名の論文著者
• Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japanの論文著者

関連著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Yagi Kouta

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Kaga Mitsuru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Kouji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Kuwano Yuka

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Takatoshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Watanabe Masahiro

  Faculty Of Environmental Earth Science Hokkaiod University:center For Climate System Research The University Of Tokyo

• Yasuda Toshiki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Nakashima Tsubasa

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Suzuki Tomoyuki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Takeuchi Tetsuya

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Iwaya Motoaki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Takeda Kenichirou

  Faculty of Science and Engineering, Meijo University, Nagoya 468-8502, Japan

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著作論文

• Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
• GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
• Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)

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