GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes

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概要

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• We optimized p⁺⁺-GaInN/n⁺⁺-GaN tunnel junctions grown on conventional light-emitting diodes, corresponding to n--p--n structures. We investigated two dependences at the tunnel junctions, the InN mole fraction dependence and a doping dependence. The lowest voltage drop at the reverse-biased tunnel junction was 0.68 V at 20 mA with a 3 nm p⁺⁺-Ga<inf>0.8</inf>In<inf>0.2</inf>N (Mg: 1\times 10^{20} cm^-3)/30 nm n⁺⁺-GaN (Si: 4\times 10^{20} cm^-3) structure. We then found that the Mg memory effect was reasonably suppressed by using the p⁺⁺-GaInN instead of a p⁺⁺-GaN. At the same time, the amount of Si doping in the following n⁺⁺-GaN should be substantially high to overcome the Mg memory effect.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Iwaya Motoaki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Kuwano Yuka

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Kaga Mitsuru

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Morita Takatoshi

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yamashita Kouji

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yagi Kouta

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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