Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
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概要
- 論文の詳細を見る
Effect of H2-preannealing of sapphire substrate on low-temperature-deposited (LT) AlN buffer layer deposited by metalorganic vapor epitaxy has been investigated. Crystallinity of LT-AlN buffer layer drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.
- 2005-06-15
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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TSUDA Michinobu
Single Crystal Division, Kyocera Corporation
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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Balakrishnan Krishnan
Faculty Of Science And Technology 21st Century Coe Nano-factory Meijo University
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Amano Hiroshi
Faculty Of Horticulture Chiba University
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Balakrishnan Krishnan
Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Iwaya Motoaki
Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Tsuda Michinobu
Single Crystal Division, Kyocera Corporation, 1166-6 Nagatanino, Hebimizo-cho, Yokaichi, Shiga 527-8555, Japan
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Amano Hiroshi
Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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