High-Power UV-Light-Emitting Diode on Sapphire
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrated a UV-light-emitting diode on low-dislocation-density AlGaN. This new UV-light-emitting diode shows a peak wavelength of 363 nm, a full-width at half maximum as narrow as 4.8 nm (${\sim}45$ meV) and an output power of 3.2 mW at 100 mA DC current injection.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
-
Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
-
Akasaki Isamu
Faculty Of Science And Technology Meijo University
-
Iwaya Motoaki
Faculty Of Science And Technology Meijo University
-
MIYAZAKI Atsushi
Faculty of Science and Technology, Meijo University
-
WATANABE Yasuhiro
Faculty of Science and Technology, Meijo University
-
Takanami Shun
Faculty Of Science And Technology Meijo University
-
Amano Hiroshi
Faculty Of Horticulture Chiba University
-
Akasaki Isamu
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Takanami Shun
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Amano Hiroshi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Miyazaki Atsushi
Faculty of Science and Technology, High-Tech Research Center, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502 Japan
-
Miyazaki Atsushi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kamiyama Satoshi
Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Miyazaki Atsushi
Faculty of Science and Engineering, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan
関連論文
- 台湾中西部におけるカンザワハダニの越冬生態と休眠特性
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- High-Power UV-Light-Emitting Diode on Sapphire
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
- Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Diversity and abundance of phytoseiid mites on Magnolia hypoleuca Siebold et Zuccarini, a candidate source of natural enemies in natural vegetation
- Chemical Ecology of Astigmatid Mites. : XLVI Neryl Formate, the Alarm Pheromone of Rhizoglyphus setosus MANSON (Acarina: Acaridae) and the Common Pheromone Component among Four Rhizoglyphus Mites
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Attractancy of Alcohols Isolated from Culture Filtrates of Fusarium Fungi for the Robine Bulb Mite, Rhizoglyphus robini CLAPAREDE (Acari : Acaridae), in Sand
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
- Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
- Correlation between Device Performance and Defects in GaInN-Based Solar Cells
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Indium--Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes
- Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- D213 Differential toxicity of selected pesticides to Diadegma semiclausum (Hellen) and Oomyzus sokolowskii (Kurdjumov), potential parasitoids of the diamondback moth in Southeast Asia and Pacific
- Anisotropically Biaxial Strain in $a$-Plane AlGaN on GaN Grown on $r$-Plane Sapphire
- 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
- High-Power UV-Light-Emitting Diode on Sapphire
- Flat $(11\bar{2}0)$ GaN Thin Film on Precisely Offset-Controlled $(1\bar{1}02)$ Sapphire Substrate
- Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
- Correlation between Device Performance and Defects in GalnN-Based Solar Cells
- High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
- Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
- Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- GaInN-Based Tunnel Junctions in n--p--n Light Emitting Diodes
- Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
- Combination of Indium--Tin Oxide and SiO
- Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
- Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions (Special Issue : Recent Advances in Nitride Semiconductors)
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Luminescent Properties of Rare-earth Complexes Embedded in Phenol-AOT Organogels Designed for Visible Color Tuning
- Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers (Special Issue : Recent Advances in Nitride Semiconductors)
- Brillouin Light Scattering from Thin Albumen of Chicken Egg
- Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors)
- Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors