High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate
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概要
- 論文の詳細を見る
We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-01-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iida Daisuke
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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Sugiyama Takayuki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Amano Hiroshi
Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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