Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al
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概要
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We discovered that Si-doped Al<inf>0.05</inf>Ga<inf>0.95</inf>N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7\times 10^{-3} \Omega cm with a carrier concentration of 4.0\times 10^{19} cm<sup>-3</sup>was almost saturated. In contrast, Si-doped Al<inf>0.05</inf>Ga<inf>0.95</inf>N with a minimum resistivity of 5.9\times 10^{-4} \Omega cm was produced with an electron concentration and electron mobility of 1.4\times 10^{20} cm<sup>-3</sup>and 70 cm<sup>2</sup>/V s, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al<inf>0.05</inf>Ga<inf>0.95</inf>N.
- 2013-12-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iida Daisuke
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
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SUGIYAMA Toru
Faculty of Science and Technology, Meijo University
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Takeuchi Tetsuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yasuda Toshiki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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