Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method
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概要
- 論文の詳細を見る
We fabricated thick freestanding AlN films by a novel close-spaced sublimation method. The spacing between a sintered AlN polycrystal and a SiC substrate is 1 mm. A Ta ring was used to control the spacing between the AlN polycrystal and the SiC substrate. In addition, a special AlN adhesive was also used to fill in the gap between the AlN polycrystal, the Ta ring, and the SiC substrate. By a combination of these techniques, an AlN growth rate as high as 600 μm/h was achieved. A freestanding AlN layer was obtained by the sublimation of the SiC substrate during the AlN growth.
- 2011-04-25
著者
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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Amano Hiroshi
Graduate School Of Horticulture Chiba Univ.
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TAKEUCHI Tetsuya
Faculty of Science and Technology, Meijo University
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Takeuchi Tetsuya
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Yamakawa Masayasu
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Murata Kazuki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Azuma Masanobu
Tokuyama Corporation, Shibuya, Tokyo 150-8383, Japan
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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Amano Hiroshi
Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
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